This N-channel silicon power MOSFET belongs to Fuji Electric's Super FAP-G Series and is supplied in the T-pack package. It is rated for 150 V drain-source voltage and ±57 A continuous drain current, with 41 mΩ maximum on-state resistance at VGS = 10 V and ID = 20 A. The device is intended for high-speed switching with low driving power, and the datasheet lists switching regulators, UPS equipment, and DC-DC converters as typical applications. It also specifies avalanche capability, 270 W maximum power dissipation at Tc = 25°C, and temperature ratings up to 150°C with -55°C minimum storage temperature.
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Fuji Electric 2SK3592-01L technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 150V |
| Continuous Drain Current | ±57A |
| Pulsed Drain Current | ±228A |
| Gate-Source Voltage | ±30V |
| Avalanche Current | 57A |
| Avalanche Energy | 272.5mJ |
| Maximum Drain-Source dV/dt | 20kV/µs |
| Peak Diode Recovery dV/dt | 5kV/µs |
| Power Dissipation at Tc=25°C | 270W |
| Storage Temperature Range | -55 to +150°C |
| Drain-Source Breakdown Voltage | 150 minV |
| Gate Threshold Voltage | 3.0 to 5.0V |
| Drain-Source On-State Resistance | 31 typ, 41 maxmΩ |
| Input Capacitance | 1940 typ, 2910 maxpF |
| Output Capacitance | 310 typ, 465 maxpF |
| Reverse Transfer Capacitance | 24 typ, 36 maxpF |
| Turn-On Delay Time | 20 typ, 30 maxns |
| Rise Time | 26 typ, 39 maxns |
| Turn-Off Delay Time | 50 typ, 75 maxns |
| Fall Time | 20 typ, 30 maxns |
| Total Gate Charge | 52 typ, 78 maxnC |
| Gate-Source Charge | 15 typ, 22.5 maxnC |
| Gate-Drain Charge | 18 typ, 27 maxnC |
| Diode Forward Voltage | 1.10 typ, 1.65 maxV |
| Reverse Recovery Time | 0.14 typµs |
| Reverse Recovery Charge | 0.77 typµC |
| Thermal Resistance Junction-to-Case | 0.463 max°C/W |
| Thermal Resistance Junction-to-Ambient | 75.0°C/W |
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