Fuji Electric
2SK3682-01
Power Field-Effect Transistor, 19A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
PackageTO-220AB
MountingThrough Hole
PolarityN
Power270W
Quick Jump:
Technical Specifications
Fuji Electric 2SK3682-01 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
19A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
500V
Dual Supply Voltage
500V
Gate to Source Voltage (Vgs)
30V
Height
0.591inch
Lead Pitch
5.45mm
Length
0.393inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
270W
Mount
Through Hole
Nominal Vgs
5V
Polarization
N
Power Dissipation
270W
RoHS Compliant
No
Termination
Through Hole
Turn-Off Delay Time
56ns
Turn-On Delay Time
29ns
Width
0.177inch
Compliance
RoHS
Not Compliant
Datasheet
Fuji Electric 2SK3682-01 Datasheet
Download the complete datasheet for Fuji Electric 2SK3682-01 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
