Fuji Electric
2SK3779-01R
Power Field-Effect Transistor, 59A I(D), 250V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Power Field-Effect Transistor, 59A I(D), 250V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Technical Specifications
Fuji Electric 2SK3779-01R technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Fuji Electric 2SK3779-01R Datasheet
Download the complete datasheet for Fuji Electric 2SK3779-01R to view detailed technical specifications.
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