N-channel enhancement mode power MOSFET with a maximum drain-source voltage of 200V and a continuous drain current of 100A. This through-hole component features a TO-247 package with 3 pins and a tab, offering a low drain-source on-resistance of 20mΩ at 10V. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2500mW.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Fuji Electric 2SK3883-01 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.5
Package Width (mm)
5
Package Height (mm)
21.5
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
200V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
100A
Maximum Drain Source Resistance
20@10VmOhm
Typical Gate Charge @ Vgs
140@10VnC
Typical Gate Charge @ 10V
140nC
Typical Input Capacitance @ Vds
6500@75VpF
Maximum Power Dissipation
2500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCT92
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Fuji Electric 2SK3883-01 Datasheet
Download the complete datasheet for Fuji Electric 2SK3883-01 to view detailed technical specifications.
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