N-channel enhancement mode silicon power MOSFET designed for through-hole mounting. This single-element transistor features a maximum drain-source voltage of 120V and a continuous drain current of 67A. Housed in a TO-220AB package with 3 pins and a tab, it offers a low drain-source on-resistance of 30mΩ (typ) at 10V. Key specifications include a typical gate charge of 52nC at 10V and a maximum power dissipation of 2020mW, operating within a temperature range of -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
Quick Jump:
Technical Specifications
Fuji Electric 2SK3920-01 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
8.6
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
120V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
67A
Material
Si
Maximum Drain Source Resistance
30(Typ)@10VmOhm
Typical Gate Charge @ Vgs
52@10VnC
Typical Gate Charge @ 10V
52nC
Typical Input Capacitance @ Vds
1880@75VpF
Maximum Power Dissipation
2020mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCT92
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Fuji Electric 2SK3920-01 Datasheet
Download the complete datasheet for Fuji Electric 2SK3920-01 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.