This device is an N-channel silicon power MOSFET in Fuji Electric's Super FAP-G Series. It is rated for 120 V drain-source voltage and 67 A continuous drain current, with 24.6 mΩ typical drain-source on-state resistance at 33.5 A and 10 V gate drive. The MOSFET is designed for high-speed switching, low driving power, and avalanche capability. It is specified for switching regulators, DC-DC converters, and uninterruptible power supplies. The device uses the T-pack(L) package and supports an operating and storage temperature range from -55 °C to +150 °C.
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Fuji Electric 2SK3921-01L technical specifications.
| Transistor Type | N-Channel Silicon Power MOSFET |
| Drain-Source Voltage | 120V |
| Continuous Drain Current | 67A |
| Pulsed Drain Current | ±268A |
| Gate-Source Voltage | ±30V |
| Single Pulse Avalanche Energy | 719.1mJ |
| Repetitive Avalanche Energy | 27.0mJ |
| Power Dissipation | 270W |
| Drain-Source On-State Resistance | 24.6 typ / 30.0 maxmΩ |
| Forward Transconductance | 14 min / 28 typS |
| Input Capacitance | 1880 typ / 2820 maxpF |
| Total Gate Charge | 52 typ / 78 maxnC |
| Reverse Recovery Time | 150ns |
| Operating and Storage Temperature Range | -55 to +150°C |
| Thermal Resistance, Channel-to-Case | 0.463 max°C/W |
