N-channel Silicon Power MOSFET for through-hole mounting. Features a maximum drain-source voltage of 900V and a continuous drain current of 2.6A. Housed in a TO-220AB package with 3 pins and a tab, this single-element enhancement mode MOSFET offers a maximum drain-source resistance of 6400 mOhm at 10V. Operating temperature range is -55°C to 150°C.
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| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220AB |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 8.6 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 900V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 2.6A |
| Material | Si |
| Maximum Drain Source Resistance | 6400@10VmOhm |
| Typical Gate Charge @ Vgs | 13@10VnC |
| Typical Gate Charge @ 10V | 13nC |
| Typical Input Capacitance @ Vds | 330@25VpF |
| Maximum Power Dissipation | 2020mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SCT92 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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