The FGW50N60VD is a 600V insulated gate bipolar transistor from Fuji Electric, packaged in a TO-247 case for through-hole mounting. It can handle a maximum collector current of 50A and a maximum power dissipation of 360W. The transistor operates within a temperature range of -40°C to 175°C and has a collector-emitter saturation voltage of 1.6V. It is designed for high-power applications and meets the requirements for insulated gate bipolar transistors.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Fuji Electric FGW50N60VD technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 600V |
| Height | 20.95mm |
| Length | 15.9mm |
| Max Collector Current | 50A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Reach SVHC Compliant | Unknown |
| Width | 5.03mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Fuji Electric FGW50N60VD Datasheet
Download the complete datasheet for Fuji Electric FGW50N60VD to view detailed technical specifications.
No datasheet is available for this part.