N-channel enhancement mode power MOSFET featuring a TO-220F package with three pins. This through-hole mounted component offers a maximum drain-source voltage of 500V and a continuous drain current of 20A. It boasts a low drain-source on-resistance of 245mΩ at 10V and a maximum power dissipation of 130W. The plastic package measures 10mm in length, 4.5mm in width, and 15mm in height, with a seated plane height of 18.7mm and a pin pitch of 2.54mm.
PackageTO-220F
MountingThrough Hole
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Technical Specifications
Fuji Electric FMA23N50E technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220F
Package Description
Transistor Outline Package Fullpak
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
15
Seated Plane Height (mm)
18.7
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220-F
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
500V
Maximum Gate Source Voltage
30V
Maximum Continuous Drain Current
20A
Maximum Drain Source Resistance
245@10VmOhm
Maximum Power Dissipation
130000mW
Compliance
Cage Code
SCT92
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Datasheet
Fuji Electric FMA23N50E Datasheet
Download the complete datasheet for Fuji Electric FMA23N50E to view detailed technical specifications.
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