N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 16A continuous drain current. This single-element silicon transistor is housed in a TO-220AB through-hole package with 3 pins and a tab, offering a maximum power dissipation of 2160mW. Key specifications include a maximum gate-source voltage of ±30V and a drain-source on-resistance of 470mΩ at 10V. Operating temperature range spans from -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Fuji Electric FMP16N60E technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
8.6
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
16A
Material
Si
Maximum Drain Source Resistance
470@10VmOhm
Typical Gate Charge @ Vgs
76@10VnC
Typical Gate Charge @ 10V
76nC
Typical Input Capacitance @ Vds
2650@25VpF
Maximum Power Dissipation
2160mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCT92
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Fuji Electric FMP16N60E Datasheet
Download the complete datasheet for Fuji Electric FMP16N60E to view detailed technical specifications.
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