N-channel enhancement mode silicon power MOSFET designed for through-hole mounting. Features a 500V maximum drain-source voltage and 20A maximum continuous drain current. Housed in a TO-220F package with 3 pins and a tab, offering a pin pitch of 2.54mm. Key electrical characteristics include a maximum drain-source on-resistance of 310mΩ at 10V and a typical gate charge of 77nC at 10V. Operates within a temperature range of -55°C to 150°C.
PackageTO-220F
MountingThrough Hole
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Technical Specifications
Fuji Electric FMP20N50E technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220F
Package Description
Transistor Outline Package Fullpak
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
15
Seated Plane Height (mm)
18.7
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220-F
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
500V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
20A
Material
Si
Maximum Drain Source Resistance
310@10VmOhm
Typical Gate Charge @ Vgs
77@10VnC
Typical Gate Charge @ 10V
77nC
Typical Input Capacitance @ Vds
2650@25VpF
Maximum Power Dissipation
2160mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCT92
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Fuji Electric FMP20N50E Datasheet
Download the complete datasheet for Fuji Electric FMP20N50E to view detailed technical specifications.
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