Fuji Electric
FMW20N60S1HF
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247-P2, 3 PIN
PackageTO-247
MountingThrough Hole
PolarityN
Power140W
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Technical Specifications
Fuji Electric FMW20N60S1HF technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
20A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
190mR
Drain to Source Voltage (Vdss)
600V
Gate to Source Voltage (Vgs)
30V
Height
0.825inch
Input Capacitance
1.47nF
Length
0.59inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
140W
Mount
Through Hole
Polarization
N
Power Dissipation
140W
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
3V
Turn-Off Delay Time
162ns
Turn-On Delay Time
22ns
Width
0.209inch
Compliance
RoHS
Compliant
Datasheet
Fuji Electric FMW20N60S1HF Datasheet
Download the complete datasheet for Fuji Electric FMW20N60S1HF to view detailed technical specifications.
No datasheet is available for this part.
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