The MBR2550CT is a dual silicon rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It features a TO-220AB package and is a single terminal device. The diode element is made of silicon and has a maximum reverse voltage rating of 50 volts. The device is suitable for general purpose rectification applications.
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Technical Specifications
Galaxy Semi-Conductor MBR2550CT technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 2 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 50 |
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Semi-Conductor MBR2550CT Datasheet
Download the complete datasheet for Galaxy Semi-Conductor MBR2550CT to view detailed technical specifications.
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