Dual rectifier diode with one silicon diode element. Features a maximum repetitive peak reverse voltage of 200V and a maximum power dissipation of 0.35W. This 3-terminal general-purpose rectifier is designed for efficient rectification applications.
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Technical Specifications
Galaxy Semi-Conductor MMBD1501A technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 200 |
| Power Dissipation-Max | 0.35 |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Semi-Conductor MMBD1501A Datasheet
Download the complete datasheet for Galaxy Semi-Conductor MMBD1501A to view detailed technical specifications.
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