Dual rectifier diode with one silicon diode element. Features a maximum repetitive peak reverse voltage of 200V and a maximum power dissipation of 0.35W. This 3-terminal general-purpose rectifier is designed for efficient rectification applications.
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Technical Specifications
Galaxy Semi-Conductor MMBD1501A technical specifications.
General
Number of Terminals
3
Terminal Position
DUAL
Number of Elements
1
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
Rep Pk Reverse Voltage-Max
200
Power Dissipation-Max
0.35
Compliance
REACH
unknown
Military Spec
False
Datasheet
Galaxy Semi-Conductor MMBD1501A Datasheet
Download the complete datasheet for Galaxy Semi-Conductor MMBD1501A to view detailed technical specifications.
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