MMBT3904

This device is an NPN switching transistor built with epitaxial planar die construction for general switching and amplification applications. It provides a collector-emitter voltage rating of 40 V, a collector-base voltage rating of 60 V, and continuous collector current capability up to 200 mA. The transistor is supplied in a SOT-23 surface-mount package with total power dissipation of 250 mW at 25 °C ambient. It operates across an ambient temperature range of -65 °C to 150 °C and has a junction temperature rating up to 150 °C. Typical small-signal performance includes transition frequency of 300 MHz, collector capacitance of 4 pF, and noise figure up to 5 dB under the stated test conditions.