This device is an NPN general-purpose bipolar transistor in a SOT-23 surface-mount package for medium-power amplification and switching. It supports 80 V collector-base voltage, 80 V collector-emitter voltage, 4 V emitter-base voltage, 0.5 A DC collector current, and 0.35 W collector dissipation at 25°C. The transistor provides a minimum DC current gain of 100, a typical transition frequency of 100 MHz, and a maximum collector-emitter saturation voltage of 0.25 V at 100 mA collector current. Junction and storage temperature range is -55°C to 150°C, and the datasheet identifies a lead-free version.
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Galaxy Semi-Conductor MMBTA06 technical specifications.
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| REACH | unknown |
| Military Spec | False |
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