Unidirectional transient voltage suppressor diode designed for overvoltage protection. Features a repetitive peak reverse voltage of 120V and a nominal breakdown voltage of 140V, with a minimum of 133V and a maximum of 147V. Offers a maximum clamping voltage of 193V and a non-repetitive peak reverse power dissipation of 400W. Operates across a wide temperature range from -55°C to 150°C. This two-terminal, single-element silicon diode provides reliable protection in demanding applications.
PolarityUNIDIRECTIONAL
Quick Jump:
Technical Specifications
Galaxy Semi-Conductor SMAJ120A technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 120 |
| Breakdown Voltage-Min | 133 |
| Non-rep Peak Rev Power Dis-Max | 400 |
| Clamping Voltage-Max | 193 |
| Breakdown Voltage-Nom | 140 |
| Breakdown Voltage-Max | 147 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Semi-Conductor SMAJ120A Datasheet
Download the complete datasheet for Galaxy Semi-Conductor SMAJ120A to view detailed technical specifications.
No datasheet is available for this part.