Unidirectional transient voltage suppressor diode designed for overvoltage protection. Features a repetitive peak reverse voltage of 120V and a nominal breakdown voltage of 140V, with a minimum of 133V and a maximum of 147V. Offers a maximum clamping voltage of 193V and a non-repetitive peak reverse power dissipation of 400W. Operates across a wide temperature range from -55°C to 150°C. This two-terminal, single-element silicon diode provides reliable protection in demanding applications.
PolarityUNIDIRECTIONAL
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Technical Specifications
Galaxy Semi-Conductor SMAJ120A technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
DUAL
Number of Elements
1
Polarity
UNIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
120
Breakdown Voltage-Min
133
Non-rep Peak Rev Power Dis-Max
400
Clamping Voltage-Max
193
Breakdown Voltage-Nom
140
Breakdown Voltage-Max
147
Compliance
RoHS
Yes
Eccn Code
EAR99
HTS Code
8541.10.00.50
REACH
unknown
Military Spec
False
Datasheet
Galaxy Semi-Conductor SMAJ120A Datasheet
Download the complete datasheet for Galaxy Semi-Conductor SMAJ120A to view detailed technical specifications.
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