Unidirectional Transient Voltage Suppressor Diode with a 40V reverse standoff voltage. This silicon diode features a 400W peak reverse power dissipation and a maximum clamping voltage of 64.5V. Operating across a wide temperature range from -55°C to 150°C, it offers a minimum breakdown voltage of 44.4V and a nominal breakdown voltage of 46.75V. The component has two terminals and a single diode element.
PolarityUNIDIRECTIONAL
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Technical Specifications
Galaxy Semi-Conductor SMAJ40A technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
DUAL
Number of Elements
1
Polarity
UNIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
40
Breakdown Voltage-Min
44.4
Non-rep Peak Rev Power Dis-Max
400
Clamping Voltage-Max
64.5
Breakdown Voltage-Nom
46.75
Breakdown Voltage-Max
49.1
Compliance
RoHS
Yes
Eccn Code
EAR99
HTS Code
8541.10.00.50
REACH
unknown
Military Spec
False
Datasheet
Galaxy Semi-Conductor SMAJ40A Datasheet
Download the complete datasheet for Galaxy Semi-Conductor SMAJ40A to view detailed technical specifications.
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