Unidirectional Transient Voltage Suppressor Diode with a 40V reverse standoff voltage. This silicon diode features a 400W peak reverse power dissipation and a maximum clamping voltage of 64.5V. Operating across a wide temperature range from -55°C to 150°C, it offers a minimum breakdown voltage of 44.4V and a nominal breakdown voltage of 46.75V. The component has two terminals and a single diode element.
PolarityUNIDIRECTIONAL
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Technical Specifications
Galaxy Semi-Conductor SMAJ40A technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 40 |
| Breakdown Voltage-Min | 44.4 |
| Non-rep Peak Rev Power Dis-Max | 400 |
| Clamping Voltage-Max | 64.5 |
| Breakdown Voltage-Nom | 46.75 |
| Breakdown Voltage-Max | 49.1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Semi-Conductor SMAJ40A Datasheet
Download the complete datasheet for Galaxy Semi-Conductor SMAJ40A to view detailed technical specifications.
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