Unidirectional transient voltage suppressor diode, 600W peak reverse power dissipation, designed for 120V repetitive peak reverse voltage. Features a breakdown voltage range from 133V to 147V, with a nominal breakdown of 140V. Maximum clamping voltage is 193V. This single-element silicon diode operates within a temperature range of -55°C to 150°C and is housed in a DO-214AA (SMB) package with two terminals.
PolarityUNIDIRECTIONAL
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Technical Specifications
Galaxy Semi-Conductor SMBJ120A technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
DUAL
JEDEC Package Code
DO-214AA
Number of Elements
1
Polarity
UNIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
120
Breakdown Voltage-Min
133
Non-rep Peak Rev Power Dis-Max
600
Clamping Voltage-Max
193
Breakdown Voltage-Nom
140
Breakdown Voltage-Max
147
Compliance
RoHS
Yes
Eccn Code
EAR99
HTS Code
8541.10.00.50
REACH
unknown
Military Spec
False
Datasheet
Galaxy Semi-Conductor SMBJ120A Datasheet
Download the complete datasheet for Galaxy Semi-Conductor SMBJ120A to view detailed technical specifications.
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