Bidirectional transient voltage suppressor diode, 600W peak pulse power, featuring a 15V reverse standoff voltage. This silicon diode offers a minimum breakdown voltage of 16.7V and a nominal breakdown voltage of 17.6V, with a maximum breakdown voltage of 18.5V. Maximum clamping voltage is 24.4V. The component is housed in a DO-214AA SMB package with 2 terminals and operates across a temperature range of -55°C to 150°C.
Galaxy Semi-Conductor SMBJ15CA technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 15 |
| Breakdown Voltage-Min | 16.7 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 24.4 |
| Breakdown Voltage-Nom | 17.6 |
| Breakdown Voltage-Max | 18.5 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for Galaxy Semi-Conductor SMBJ15CA to view detailed technical specifications.
No datasheet is available for this part.