Bidirectional transient voltage suppressor diode with 600W peak reverse power dissipation. Features a 33V standoff voltage (V RWM) and a 36.7V minimum breakdown voltage. This single-element silicon diode operates bidirectionally, offering protection across a wide temperature range from -55°C to 150°C. Packaged in a DO-214AA (SMB) surface-mount package with two terminals.
PolarityBIDIRECTIONAL
Quick Jump:
Technical Specifications
Galaxy Semi-Conductor SMBJ33CA technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 33 |
| Breakdown Voltage-Min | 36.7 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 53.3 |
| Breakdown Voltage-Nom | 38.65 |
| Breakdown Voltage-Max | 40.6 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Galaxy Semi-Conductor SMBJ33CA Datasheet
Download the complete datasheet for Galaxy Semi-Conductor SMBJ33CA to view detailed technical specifications.
No datasheet is available for this part.