Bidirectional transient voltage suppressor diode with 600W peak reverse power dissipation. Features a 33V standoff voltage (V RWM) and a 36.7V minimum breakdown voltage. This single-element silicon diode operates bidirectionally, offering protection across a wide temperature range from -55°C to 150°C. Packaged in a DO-214AA (SMB) surface-mount package with two terminals.
PolarityBIDIRECTIONAL
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Technical Specifications
Galaxy Semi-Conductor SMBJ33CA technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
DUAL
JEDEC Package Code
DO-214AA
Number of Elements
1
Polarity
BIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
33
Breakdown Voltage-Min
36.7
Non-rep Peak Rev Power Dis-Max
600
Clamping Voltage-Max
53.3
Breakdown Voltage-Nom
38.65
Breakdown Voltage-Max
40.6
Compliance
RoHS
Yes
Eccn Code
EAR99
HTS Code
8541.10.00.50
REACH
unknown
Military Spec
False
Datasheet
Galaxy Semi-Conductor SMBJ33CA Datasheet
Download the complete datasheet for Galaxy Semi-Conductor SMBJ33CA to view detailed technical specifications.
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