Bidirectional Transient Voltage Suppressor Diode designed for robust circuit protection. Features a repetitive peak reverse voltage of 26V and a maximum non-repetitive peak reverse power dissipation of 1500W. Breakdown voltage ranges from a minimum of 28.9V to a maximum of 31.9V, with a nominal breakdown voltage of 30.4V. Maximum clamping voltage is 42.1V. Operates across a wide temperature range from -55°C to 150°C. This silicon diode has two terminals and one element, suitable for bidirectional transient voltage suppression.
Galaxy Semi-Conductor SMCJ26CA technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 26 |
| Breakdown Voltage-Min | 28.9 |
| Non-rep Peak Rev Power Dis-Max | 1500 |
| Clamping Voltage-Max | 42.1 |
| Breakdown Voltage-Nom | 30.4 |
| Breakdown Voltage-Max | 31.9 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for Galaxy Semi-Conductor SMCJ26CA to view detailed technical specifications.
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