Silicon NPN transistor is designed for small-signal general-purpose and switching applications. The device is supplied in a TO-39 through-hole metal can package with emitter, base, and collector lead coding. It is rated for 30 V collector-emitter voltage, 800 mA continuous collector current, and 800 mW power dissipation at 25 °C ambient. Electrical characteristics include 250 MHz minimum transition frequency, 8 pF maximum collector-base capacitance, and switching times of 35 ns turn-on and 285 ns turn-off under specified test conditions.
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| Transistor Type | NPN |
| Technology | Silicon epitaxial planar |
| Collector-Base Voltage | 60V |
| Collector-Emitter Voltage | 30V |
| Emitter-Base Voltage | 5.0V |
| Continuous Collector Current | 800mA |
| Power Dissipation at 25 °C Ambient | 800mW |
| Power Dissipation at 25 °C Case | 3.0W |
| Operating and Storage Junction Temperature | -65 to +200°C |
| DC Current Gain at 150 mA | 100 to 300 |
| Collector-Emitter Saturation Voltage at 150 mA | 0.4 maxV |
| Base-Emitter Saturation Voltage at 150 mA | 1.3 maxV |
| Transition Frequency | 250 minMHz |
| Collector-Base Capacitance | 8.0 maxpF |
| Turn-On Time | 35 maxns |
| Turn-Off Time | 285 maxns |
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