Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode, a surface mount rectifier diode in a DO-214 package. Features 3300V repetitive reverse voltage (VRRM) and 0.3A forward current (IF). Offers a low forward voltage (VF) of 1.7V at 0.3A and a reverse current (IR) of 1µA at 3300V. Exhibits fast switching speeds with reverse recovery time (trr) and switching time (ts) both under 10ns. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 105W.
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Technical Specifications
Genesic GAP3SLT33-214 technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
DUAL
JEDEC Package Code
DO-214
Number of Elements
1
Diode Element Material
SILICON CARBIDE
Diode Type
RECTIFIER DIODE
Rep Pk Reverse Voltage-Max
3300
Power Dissipation-Max
105
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
HTS Code
8541.10.00.70
REACH
Compliant
Military Spec
False
Datasheet
Genesic GAP3SLT33-214 Datasheet
Download the complete datasheet for Genesic GAP3SLT33-214 to view detailed technical specifications.
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