Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode, a surface mount rectifier diode in a DO-214 package. Features 3300V repetitive reverse voltage (VRRM) and 0.3A forward current (IF). Offers a low forward voltage (VF) of 1.7V at 0.3A and a reverse current (IR) of 1µA at 3300V. Exhibits fast switching speeds with reverse recovery time (trr) and switching time (ts) both under 10ns. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 105W.
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Genesic GAP3SLT33-214 technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214 |
| Number of Elements | 1 |
| Diode Element Material | SILICON CARBIDE |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 3300 |
| Power Dissipation-Max | 105 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.70 |
| REACH | Compliant |
| Military Spec | False |
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