Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 50A TO-247-2; Mounting Style: Through Hole; Package / Case: TO-247-2; Packaging: Tube; Factory Pack Quantity: 30; Configuration: Single; Repetitive Reverse Voltagen(VRRM): 1200 V; Forward Currentn(IF): 50 A; Forward Voltagen(VF): 1.5 V @ 50 A; Reverse Currentn(IR): 4 uA @ 1200 V; Total Capacitive Charge (QC): 199 nC; Capacitancen(C): 3263 pF @ 1 V; Reverse Recovery Timen(trr): < 10 ns; Forward Surge Currentn(IFSM): 300 A; Power Dissipationn(PD): 1228 W; Switching Speedn(ts): < 10 ns; Minimum Operating Temperature: - 55 °C; Maximum Operating Temperature: 175 °C
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Genesic GB50SLT12-247 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Max Operating Temperature | 175 |
| Number of Elements | 1 |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 1200 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.80 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Genesic GB50SLT12-247 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.