PNP Bipolar Junction Transistor (BJT) for small signal applications. Features 80V collector-emitter breakdown voltage and 1A continuous collector current. Operates with a maximum power dissipation of 1W and a transition frequency of 200MHz. Packaged in a surface-mount SOT-223 plastic package, this silicon transistor is RoHS compliant.
Sign in to ask questions about the Diodes DCP53-13 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Diodes DCP53-13 technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | -100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 200MHz |
| Height | 1.6mm |
| hFE Min | 25 |
| Length | 6.5mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Weight | 0.000282oz |
| Width | 3.5mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DCP53-13 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
