N-Channel Power MOSFET featuring 100V Drain-Source Voltage (Vdss) and 9.2A Continuous Drain Current (ID). This silicon Metal-oxide Semiconductor FET offers a low 270mΩ Drain-Source On-Resistance (Rds On) and a maximum power dissipation of 60W. Designed for through-hole mounting in a TO-220AB package, it exhibits fast switching characteristics with a turn-on delay of 8.8ns and a fall time of 20ns. Operating temperature range spans from -55°C to 175°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay IRF520 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9.2A |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 360pF |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 8.8ns |
| DC Rated Voltage | 100V |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Not CompliantNo |
Download the complete datasheet for Vishay IRF520 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
