N-Channel Insulated Gate Bipolar Transistor (IGBT) for high-power applications. Features a 1200V Collector-Emitter Breakdown Voltage (V(BR)CES) and a continuous Collector Current (I(C)) of 45A. This through-hole mounted component offers a maximum power dissipation of 200W and a low Collector-Emitter Saturation Voltage of 3.7V. Packaged in TO-247AC, it operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
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International Rectifier IRG4PH50UPBF technical specifications.
| Package/Case | TO-247AC |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 3.7V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.7V |
| Current Rating | 45A |
| Height | 20.3mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Collector Current | 45A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Bulk |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 200ns |
| Turn-On Delay Time | 35ns |
| DC Rated Voltage | 1.2kV |
| Width | 5.3mm |
| RoHS | Compliant |
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