N-channel MOSFET with 20V drain-source voltage and 35A continuous drain current. Features low 5mR drain-to-source resistance and 36W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Surface mountable with tape and reel packaging.
MountingSurface Mount
PolarityN-CHANNEL
Power4.2W
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Technical Specifications
Vishay SIR410DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 35A |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 1.6nF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 36W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 4.2W |
| Radiation Hardening | No |
| Rds On Max | 4.8mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.
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