This 260-pin HBGA-packaged DDR SRAM IC operates within a supply voltage range of 1.2V to 1.35V, with a nominal supply voltage of 1.25V. It features a parallel interface and has a memory capacity of 8388608 words, with 8000000 words of code. The IC is designed for use in applications requiring high-density memory storage.
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| Number of Terminals | 260 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | R-PBGA-B260 |
| Width | 14 |
| Length | 22 |
| Number of Functions | 1 |
| Supply Voltage-Nom (Vsup) | 1.25 |
| Supply Voltage-Max (Vsup) | 1.35 |
| Supply Voltage-Min (Vsup) | 1.2 |
| Number of Words | 8388608 |
| Number of Words Code | 8000000 |
| Memory IC Type | DDR SRAM |
| Parallel/Serial | PARALLEL |
| RoHS | Yes |
| Eccn Code | 3A991.B.2.B |
| HTS Code | 8542.32.00.41 |
| REACH | Compliant |
| Military Spec | False |
