N-channel silicon power MOSFET featuring 75A continuous drain current and 55V drain-source voltage. Boasts a low on-resistance of 0.007 ohms, enabling efficient power handling. Designed with a single element and metal-oxide semiconductor field-effect technology. Encased in a TO-263AB package for robust thermal performance up to 175°C.
Harris HUF75345S3ST technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
No datasheet is available for this part.
