N-Channel Power MOSFET, 14A continuous drain current (I(D)) and 50V drain-source voltage (V(DS)). Features a low on-resistance of 0.1 ohm. This single-element silicon Metal-oxide Semiconductor FET is housed in a TO-252AA package with a maximum operating temperature of 175°C.
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Technical Specifications
Harris RFD14N05LSM9A technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
Compliance
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Harris RFD14N05LSM9A Datasheet
Download the complete datasheet for Harris RFD14N05LSM9A to view detailed technical specifications.
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