N-channel power MOSFET featuring 16A continuous drain current and 50V drain-source voltage. This silicon metal-oxide semiconductor field-effect transistor offers a low on-resistance of 0.047 ohms. Designed with a single element and two terminals, it operates up to a maximum temperature of 175°C and utilizes the TO-252AA package.
Harris RFD16N05SM9A technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
No datasheet is available for this part.
