Harris
RFD7N10LESM9A
Power Field-Effect Transistor, 7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN
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Technical Specifications
Harris RFD7N10LESM9A technical specifications.
General
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-252AA
Number of Elements
1
Compliance
Eccn Code
EAR99
REACH
unknown
Military Spec
False
Datasheet
Harris RFD7N10LESM9A Datasheet
Download the complete datasheet for Harris RFD7N10LESM9A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.