The HTNFET-T transistor features a maximum drain to source voltage of 55V and a maximum power dissipation of 50W. It has a low input capacitance of 290pF and a maximum on-resistance of 400mR. The transistor is packaged in a single inline package (SIP) and is available in bulk quantities. It is suitable for use in a variety of applications, including those requiring high power handling and low capacitance.
Honeywell HTNFET-T technical specifications.
| Package/Case | SIP |
| Drain to Source Voltage (Vdss) | 55V |
| Input Capacitance | 290pF |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Bulk |
| Rds On Max | 400mR |
| Series | HTMOS™ |
| RoHS | Not Compliant |
No datasheet is available for this part.
