General purpose NPN phototransistor with radial package, through-hole mounting, and side-view orientation. Features a 30V collector-emitter voltage, 3.6mA maximum collector current, and 100mW maximum power dissipation. Operates across a temperature range of -40°C to 85°C with a 935nm wavelength sensitivity and a 50° viewing angle. Fall time is 15000ns.
PackageRadial
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
Honeywell SDP8406-002 technical specifications.
General
Package/Case
Radial
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Fall Time
15000ns
Height
5.72mm
Lead Free
Lead Free
Length
4.45mm
Max Collector Current
3.6mA
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Orientation
Side View
Output Current
3.6mA
Package Material
Plastic
Packaging
Bulk
Polarity
NPN
Power Consumption
100mW
Power Dissipation
100mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
No
Viewing Angle
50°
Wavelength
935nm
Width
2.28mm
Compliance
RoHS
Not CompliantNo
Datasheet
Honeywell SDP8406-002 Datasheet
Download the complete datasheet for Honeywell SDP8406-002 to view detailed technical specifications.
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