N-channel enhancement-mode MOSFET provides a 100 V drain-source voltage rating and 180 A continuous drain current rating. The device has a maximum on-resistance of 6.5 mΩ at 10 V gate drive and a 346 W power dissipation rating. Gate charge is specified as 185 nC at 10 V, with 7.889 nF input capacitance, 1.013 nF output capacitance, and 631 pF reverse transfer capacitance. The part uses a TO-263-2L surface-mount package and is listed as RoHS compliant.
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| Type | N-Channel |
| Configuration | 1 N-channel |
| Drain to Source Voltage | 100V |
| Continuous Drain Current | 180A |
| RDS(on) | 6.5 @ 10 VmΩ |
| Gate Threshold Voltage | 4V |
| Gate Charge | 185 @ 10 VnC |
| Input Capacitance | 7.889nF |
| Output Capacitance | 1.013nF |
| Reverse Transfer Capacitance | 631pF |
| Power Dissipation | 346W |
| Package | TO-263-2L |
| RoHS | Compliant |
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