N-channel enhancement-mode power MOSFET supports 100 V drain-source voltage and 180 A continuous drain current at 25 °C case temperature. The device has low on-state resistance rated at 4.2 mΩ typical and 5.5 mΩ maximum with a 10 V gate drive. It is rated for 348 W maximum power dissipation and 175 °C maximum junction temperature. Avalanche testing, a ±25 V gate-source rating, and RoHS-compliant lead-free green construction are specified. TO-220FB-3L tube packaging is used for the HY3810P orderable version.
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| Channel Type | N-Channel |
| Drain-Source Voltage | 100V |
| Continuous Drain Current at 25°C | 180A |
| Continuous Drain Current at 100°C | 132A |
| Pulsed Drain Current | 620A |
| Gate-Source Voltage | ±25V |
| Drain-Source On Resistance Typical | 4.2mΩ |
| Drain-Source On Resistance Maximum | 5.5mΩ |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Maximum Power Dissipation at 25°C | 348W |
| Maximum Junction Temperature | 175°C |
| Storage Temperature Range | -55 to 175°C |
| Junction-to-Case Thermal Resistance | 0.43°C/W |
| Single Pulse Avalanche Energy | 1128mJ |
| Input Capacitance | 7430pF |
| Output Capacitance | 615pF |
| Reverse Transfer Capacitance | 459pF |
| Total Gate Charge | 174nC |
| Turn-On Delay Time | 30ns |
| Turn-Off Delay Time | 76ns |
| RoHS | Compliant |
| Lead-free | Yes |
| Halogen-free | Yes |
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