This device is an N-channel enhancement mode power MOSFET built with trench technology. It is rated for 100 V drain-to-source voltage, 316 A continuous drain current at 25°C, and 500 W power dissipation. The part is offered in a TO-247A-3L package with typical 2.1 mΩ on-resistance at 10 V gate drive and 2.5 mΩ maximum on-resistance. The manufacturer lists it for load switch and inverter applications and marks it as RoHS compliant.
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Huayi Microelectronics HY5110W technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 100V |
| Continuous Drain Current | 316A |
| Continuous Drain Current at 100°C | 214A |
| Power Dissipation | 500W |
| Drain-Source On-Resistance | 2.1 typ @ VGS=10V, IDS=158AmΩ |
| Drain-Source On-Resistance | 2.5 max @ VGS=10V, IDS=158AmΩ |
| Gate-Source Voltage | ±25V |
| Gate Threshold Voltage | 2 to 4V |
| Maximum Junction Temperature | 175°C |
| Storage Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 0.3°C/W |
| Input Capacitance | 16465pF |
| Output Capacitance | 1558pF |
| Reverse Transfer Capacitance | 850pF |
| Total Gate Charge | 356nC |
| Reverse Recovery Time | 74ns |
| Reverse Recovery Charge | 138nC |
| RoHS | Compliant |
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