This device is a single N-channel MOSFET rated for 100 V drain-to-source voltage and 180 A continuous drain current. It is housed in a through-hole TO-220FB-3L package and has a power dissipation rating of 220 W. The typical on-resistance is 4 mΩ at 10 V gate drive, and the gate threshold voltage is 4 V. Gate charge is specified as 115 nC at 10 V, with 7.27 nF input capacitance, 2.42 nF output capacitance, and 189 pF reverse transfer capacitance. The operating temperature range is -55 °C to +175 °C.
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Huayi Microelectronics HYG035N10NS2P technical specifications.
| Channel Type | N-Channel |
| Number of Channels | 1 |
| Drain to Source Voltage | 100V |
| Continuous Drain Current | 180A |
| Power Dissipation | 220W |
| RDS(on) | 4 @ VGS=10VmΩ |
| Gate Threshold Voltage | 4V |
| Gate Charge | 115 @ 10VnC |
| Input Capacitance | 7.27nF |
| Output Capacitance | 2.42nF |
| Reverse Transfer Capacitance | 189pF |
| Operating Temperature | -55 to +175°C |
| Mounting Type | Through Hole |
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