This N-channel enhancement-mode MOSFET is rated for 100 V drain-source voltage and 160 A continuous drain current at 25°C case temperature. It features 3.5 mΩ typical and 4.2 mΩ maximum on-resistance at 10 V gate drive, with 200 W maximum power dissipation and a junction temperature range of -55°C to 175°C. The device is supplied in a TO-220FB-3L package and is intended for power switching and DC-DC converter applications. It is 100% avalanche tested and specified as RoHS compliant and halogen-free.
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Huayi Microelectronics HYG042N10NS1P technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 100V |
| Continuous Drain Current | 160A |
| Continuous Drain Current at 100°C | 113A |
| Pulsed Drain Current | 520A |
| Gate-Source Voltage | ±20V |
| On-Resistance Typ | 3.5 @ VGS=10V, IDS=50AmΩ |
| On-Resistance Max | 4.2 @ VGS=10V, IDS=50AmΩ |
| Gate Threshold Voltage | 2 to 4V |
| Power Dissipation | 200W |
| Junction Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 0.75°C/W |
| Avalanche Energy | 650mJ |
| Input Capacitance | 7040pF |
| Output Capacitance | 2506pF |
| Reverse Transfer Capacitance | 240pF |
| Total Gate Charge | 119nC |
| Reverse Recovery Time | 70ns |
| Reverse Recovery Charge | 146nC |
| Package | TO-220FB-3L |
| RoHS | Compliant |
| Halogen Free | Yes |
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