This device is an N-channel power MOSFET offered in a TO-220FB-3L package. Search and distributor snippets identify a 100 V drain-source rating, 160 A continuous drain current, and 4.5 mΩ on-resistance at 10 V gate drive. Reported power dissipation is 250 W, with a gate threshold range around 2 V to 4 V. Additional listed electrical parameters include about 20 V maximum gate-source voltage, approximately 7877 pF input capacitance, and about 117 nC total gate charge.
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Huayi Microelectronics HYG045N10NS1P technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 160A |
| On-Resistance (RDS(on)) | 4.5 @ VGS=10VmΩ |
| Power Dissipation (Pd) | 250W |
| Gate-Source Voltage | 20V |
| Gate Threshold Voltage (VGS(th)) | 2 to 4V |
| Input Capacitance (Ciss) | 7877pF |
| Total Gate Charge (Qg) | 117nC |
| Package | TO-220FB-3L |
