This N-channel power MOSFET is rated for 100 V drain-to-source voltage and 152 A continuous drain current at 25°C silicon limit. It is supplied in a TO-263 package and has a typical 4.6 mΩ drain-source on-resistance at VGS = 10 V and ID = 20 A. The device is intended for high-speed power switching and features enhanced body-diode dv/dt capability and enhanced avalanche ruggedness with 625 mJ single-pulse avalanche energy. Its junction and storage temperature range is -55°C to 175°C, and the datasheet lists it as lead free for uses including synchronous rectification, UPS, motor control, and power tools.
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| Channel Type | N-Channel |
| Drain-Source Voltage | 100V |
| Continuous Drain Current (Silicon Limited, Tc=25°C) | 152A |
| Continuous Drain Current (Package Limited, Tc=25°C) | 120A |
| Pulsed Drain Current | 450A |
| Gate-Source Voltage | ±20V |
| Power Dissipation | 250W |
| Single Pulse Avalanche Energy | 625mJ |
| Drain-Source On-Resistance (typ @ VGS=10V, ID=20A) | 4.6mΩ |
| Gate Threshold Voltage (max) | 4V |
| Total Gate Charge (typ) | 61nC |
| Gate-Source Charge (typ) | 20nC |
| Gate-Drain Charge (typ) | 10nC |
| Input Capacitance (typ) | 5110pF |
| Output Capacitance (typ) | 400pF |
| Reverse Transfer Capacitance (typ) | 60pF |
| Thermal Resistance Junction-Case | 0.6°C/W |
| Operating Junction and Storage Temperature | -55 to 175°C |
| Lead Free | Yes |
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