This device is a single N-channel power MOSFET in a TO-220 package. It is rated for 100 V drain-source voltage and 161 A continuous drain current at 25°C. The maximum threshold voltage is 4 V, and the maximum on-resistance at 10 V gate drive is 4.2 mΩ. Typical gate charge values are 52 nC total gate charge, 16 nC gate-to-source charge, and 11 nC gate-to-drain charge. It is listed by the manufacturer for industrial applications.
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Hunteck Semiconductor HGP042N10S technical specifications.
| Product type | MOSFET |
| Channel type | N |
| Configuration | Single |
| Drain-source voltage | 100V |
| Continuous drain current at 25°C | 161A |
| Gate threshold voltage max | 4V |
| On-resistance max at VGS=10V | 4.2mΩ |
| Total gate charge | 52nC |
| Gate-to-source charge | 16nC |
| Gate-to-drain charge | 11nC |
| Package | TO-220 |
| Application qualification | Industrial |
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