This N-channel power MOSFET is rated for 150 V drain-to-source voltage and 250 A continuous drain current at TC = 25 °C. It is offered in a TOLL package and is listed in Hunteck's 150 V MOSFET family for industrial applications. Maximum drain-to-source on-resistance is 4.1 mΩ at VGS = 10 V, with total gate charge of 73 nC and gate threshold voltage from 2.0 V to 3.5 V. The device supports 720 mJ single-pulse avalanche energy, 600 W power dissipation, and operation from -55 °C to 175 °C. The datasheet also states enhanced avalanche ruggedness, enhanced body-diode dv/dt capability, and lead-free construction.
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| Transistor Type | N-Channel |
| Drain-Source Voltage | 150V |
| Continuous Drain Current | 250A |
| Continuous Drain Current @ TC=100°C | 177A |
| Gate-Source Voltage | ±20V |
| Drain-Source On-Resistance @ VGS=10V | 4.1 maxmΩ |
| Gate Threshold Voltage | 2.0 to 3.5V |
| Total Gate Charge | 73nC |
| Gate-Source Charge | 27nC |
| Gate-Drain Charge | 10nC |
| Single Pulse Avalanche Energy | 720mJ |
| Power Dissipation | 600W |
| Junction-to-Case Thermal Resistance | 0.25°C/W |
| Operating Junction Temperature | -55 to 175°C |
Download the complete datasheet for Hunteck Semiconductor HGT041N15S to view detailed technical specifications.
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