The 4GBJ406F is a 4-element silicon bridge rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It has a maximum reverse voltage rating of 600V and a breakdown voltage of 600V. The diode is packaged in a 4-pin R-PSFM-T4 package and features a single terminal position. The 4GBJ406F is suitable for use in a variety of applications where a high-reliability bridge rectifier is required.
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Technical Specifications
HY Electronic 4GBJ406F technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 600 |
| Breakdown Voltage-Min | 600 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.80 |
| REACH | unknown |
| Military Spec | False |
Datasheet
HY Electronic 4GBJ406F Datasheet
Download the complete datasheet for HY Electronic 4GBJ406F to view detailed technical specifications.
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