PNP silicon bipolar transistor supports general-purpose linear and switching applications. The device is rated for 40 V collector-emitter voltage and 200 mA continuous collector current. TO-92 through-hole packaging supports medium-power small-signal use with 625 mW total power dissipation at 25 °C. Electrical characteristics include minimum 250 MHz transition frequency and specified DC current gain over common collector-current operating points.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Industry Standard 2N3906 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Transistor Polarity | PNP |
| Transistor Type | Bipolar junction transistor |
| Collector-Emitter Voltage | 40V |
| Collector-Base Voltage | 40V |
| Emitter-Base Voltage | 5V |
| Continuous Collector Current | 200mA |
| Total Power Dissipation at 25 °C | 625mW |
| DC Current Gain Minimum at IC 10 mA | 100 |
| Transition Frequency Minimum | 250MHz |
| Collector-Emitter Saturation Voltage Maximum | 0.25V |
| Output Capacitance Maximum | 4.5pF |
| Junction Temperature Maximum | 150°C |
| Storage Temperature Range | -55 to 150°C |
| Package | TO-92 |
Download the complete datasheet for Industry Standard 2N3906 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
These are design resources that include the Industry Standard 2N3906
A comprehensive guide to designing with switched-capacitor filters, covering layout techniques, power supply selection, and performance optimization for LTC1064 series ICs.
