This single-channel isolated gate driver is designed for up to 2300 V IGBT switches and supports IGBTs and SiC MOSFETs. It provides 6.5 A peak sink current and 6 A peak source current, with 40 ns turn-on propagation delay, 30 ns turn-off propagation delay, and 15 ns rise time. The device uses a galvanically isolated coreless-transformer architecture with opto-compatible input behavior and integrated UVLO protection with 12 V turn-on and 11.05 V turn-off thresholds. It is housed in a 6-pin PG-LDSO-6 wide-body package with CTI 600 material and 8 mm creepage distance. The part is RoHS compliant and halogen free.
Infineon 1ED3011MC12I technical specifications.
| Channels | 1 |
| Configuration | High-side |
| Voltage Class | 2300V |
| Output Current (Sink) | 6.5A |
| Output Current (Source) | 6A |
| Isolation Type | Reinforced galvanic |
| Isolation Voltage VISO (1 min) | 5700Vrms |
| Isolation Voltage VIOTM | 8000V |
| Isolation Voltage VIORM | 1767V |
| Turn On Propagation Delay | 40ns |
| Turn Off Propagation Delay | 30ns |
| Rise Time | 15ns |
| UVLO Turn-On Threshold | 12V |
| UVLO Turn-Off Threshold | 11.05V |
| Output Supply Voltage (Absolute Maximum) | 35V |
| Input Diode Forward Current | 5.5 to 15mA |
| Creepage Distance | 8mm |
| CMTI | >300kV/µs |
| RoHS | Compliant |
| Halogen | Halogen free |
No datasheet is available for this part.
