This single-channel isolated gate driver is intended for IGBTs, MOSFETs, and SiC MOSFETs. It provides 13.5 A typical source current, 14 A typical sink current, 90 ns propagation delay, and separate source and sink outputs with short-circuit clamping. The device supports applications up to the 2300 V voltage class, uses functional galvanic isolation with a coreless transformer, and includes UVLO protection with hysteresis. It is supplied in a PG-DSO-8 narrow-body SMD package, and the listed orderable part is RoHS compliant, halogen free, and lead free.
Sign in to ask questions about the Infineon 1ED3124MU12F datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon 1ED3124MU12F technical specifications.
| Channels | 1 |
| Configuration | High-side |
| Input VCC range | 3.1 to 17V |
| Isolation type | Galvanic isolation - Functional |
| Output current source | 13.5A |
| Output current sink | 14A |
| Output power PDout | 500mW |
| Qualification | Industrial |
| RDS(on) high max | 0.65ohm |
| RDS(on) high typ | 0.38ohm |
| RDS(on) low max | 0.6ohm |
| RDS(on) low typ | 0.28ohm |
| Thermal resistance junction-to-ambient | 151K/W |
| Turn-off propagation delay | 90ns |
| Turn-on propagation delay | 90ns |
| VBS UVLO off | 10.5V |
| VBS UVLO on | 12.5V |
| VCC UVLO off | 2.5V |
| VCC UVLO on | 3.1V |
| Voltage class | 2300V |
| Absolute maximum output voltage | 40V |
| CMTI | >200kV/µs |
| RoHS Compliant | Yes |
| Lead-free | Yes |
| Halogen Free | Yes |
Download the complete datasheet for Infineon 1ED3124MU12F to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
