Single-channel isolated gate driver IC for IGBTs, MOSFETs, and SiC MOSFETs with galvanic isolation through a coreless transformer. It supports up to 2300 V functional offset voltage, 3 kV RMS isolation, and operates from a 3 V to 17 V input VCC range. The device provides separate source and sink outputs with 6 A source and 6.5 A sink peak current, 40 ns turn-on and turn-off propagation delay, and UVLO thresholds of 9.3 V on and 8.6 V off. It is qualified for industrial use in the PG-DSO-8-72 SOIC-8 surface-mount package and is lead-free, halogen-free, and RoHS compliant.
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Infineon 1ED3140MU12F technical specifications.
| Channels | 1 |
| Configuration | High-side |
| Input VCC range | 3 to 17V |
| Isolation type | Galvanic isolation - Functional |
| Output current (source) | 6A |
| Output current (sink) | 6.5A |
| Output power dissipation | 500mW |
| Qualification | Industrial |
| RDSON_H max | 2.1Ω |
| RDSON_H typ | 0.9Ω |
| RDSON_L max | 1.1Ω |
| RDSON_L typ | 0.5Ω |
| Thermal resistance junction-to-ambient | 129K/W |
| Turn-off propagation delay | 40ns |
| Turn-on propagation delay | 40ns |
| VBS UVLO on threshold | 9.3V |
| VBS UVLO off threshold | 8.6V |
| Voltage class | 2300V |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead-free | Yes |
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